The Dage X-Ray XD7600NT provides the highest resolution and largest X-ray images for failure analysis with oblique angle views up to 70 degrees, displayed at full 2 Mpixel resolution on screen.
-250nm (0.25 micron) feature recognition
-Revolutionary ‘filament-free’ Dage NT X-ray tube
-AXIS – Active Image Stabilisation
-XiDAT 2.0 imaging chain
-Up to 70 degree oblique angle views over the entire inspection area
-Enhanced automated inspection routines
-Automatic BGA and die-void measurements
-Comprehensive data logging and reporting facilities
-Uninterrupted rotating live oblique views 360 degrees around any point in the sample
-Users Manual

The Quanta 3D is designed to be a 3D-SEM. It combines traditional thermal emission Scanning Electron Microscopy (SEM) with Focused Ion Beam (FIB) to extend application ranges for 3D characterization and nanoanalysis. It allows charge-free imaging of a non-conductive specimen through its variable pressure vacuum system (ESEM) and gas chemistries for high-volume milling. Allows for:
-Crack tip 3D reconstruction
-Revealing sub-surface cause of surface defects on finished metal surfaces
-Characterization of strained materials along orthogonal sections
-Resolution of 3.5nm @ 30kV @ high vacuum
-5 axis motorized stage
-379 mm wide chamber
Click here for more information on the Quanta 200 3D

The Dimension 3100 Scanning Probe Microscope (SPM) utilizes automated atomic force microscopy (AFM) and scanning tunneling microscopy (STM) techniques to measure surface characteristics for semiconductor wafers and other samples up to 200 mm in diameter.
Click here for more information on the Veeco AFM

The Zeiss scanning electron microscope is the instrument of choice for clear and precise imaging on large delicate specimems or uncoated wafers. The ULTRA 60 enables clear topographic imaging with the high efficiency In-lens SE detector.

• Ultra high resolution imaging at low kV
  
• Extra large 6-axes motorised fully eucentric stage with fine stage control
  
• Large sample throughput with integrated 8" airlock
  
• High efficiency In-lens SE detector for high contrast surface imaging
  
• Download SmartTiff - download this program from Zeiss to let you do measurements on your images
  
• This tool has been moved from the cleanroom to room 160.
  Click here for more information on the Zeiss SEM

Rapid thermal processors (RTP) or rapid thermal annealers (RTA) are used to rapidly heat a sample for annealing. The RTP can heat a sample to 500 degrees C in as low as five seconds and can heat samples to 1100 degrees C in as little as 20 seconds.

The Atomic Layer Deposition (ALD) tool is used to deposit atomic layers of material. This ALD uses 2 or 3 precursor gases and pulses each of these with a purge in between. Each cycle of gases creates an atomic layer of material on the sample. The tool is set up to deposit SrO2, TiO2, and SrTi. It can take up to a 6" substrate or wafer pieces up to that area.

The e-beam evaporator will provide very little coating to the sides of any features that are perpendicular to the surface of the substrate.
-Used to deposit metal
-Low Process Pressure

The Coyote PECVD is a tube furnace PECVD used to deposit silicon nitride.

The e-beam evaporator is used to coat samples with various metals. Unlike sputtered films, evaporators only coat the surface facing away from the substrate.
-Typical deposition rates range from <1 angstroms/sec to 3 anstroms/sec.

The ramé-hart Model 250 goniometer is a software-driven instrument providing automated digital contact angle measurements. This instrument has been furnished with a 4” rotating wafer support stage and automated tilting base option. The Model 250 is also a tensiometer and has an advanced software version for surface energy measurements as well as surface tension and dynamic studies. Advancing and receding contact angles are readily determined by inclining the substrate and allowing the drop to deform as a function of gravity.

-Configured for Top and Backside Alignment (auth)
-Auto Load (cassette load)
-UV400 Exposure Optics (365nm and 405 nm)
-10x Objective Lens

The Hitachi 3500H series scanning electron microscope offers high resolution imaging in a vacuum.

The image reversal oven exposes the pattern on the resist to ammonia vapor, reversing the pattern on the mask material (e.g. certain photoresists). The oven converts to a HMDS vapor priming oven when the gas is switched between HMDS vapor and Ammonia (NH3). The temperature control is adjustable.

This table-top ink-jet microdispensing and printing platform is useful for a wide variety of applications. Typical “inks” include liquid solder, adhesives, polymers, and biological materials, including diagnostic reagents, proteins, and DNA. As a non-contact printing process, the accuracy of ink-jet dispensing is not affected by how the fluid wets a substrate, and the fluid source cannot be contaminated by materials on the substrate. In addition, the ability to free-fly fluid droplets allows the fluid to be dispensed into and onto non-planar and complex structural features.

Mask aligners are used in photolithographic processes to transfer a pattern from a mask to a photoresist coating on the substrate. The MA-6 can handle wafers up to 6" in size, and is optimized for 435 nm wavelength.

Topside/Backside Alignment
-Capable of processing up to 6"/150mm wafers
-Optimized for Top Size Alignment (TSA) and Backside Alignment (BSA)
-UV250 Optics and Hitachi Monitor
-Olympus 5x, 10x, and 20x objectives
-0.2 micron top alignment resolution
-1.0 micron back side alignment resolution

The Lindberg furnaces are used for curing polymers, sintering, and growing oxides and nitrides on silicon wafers.
Furnace 1- CMOS Sintering Tube
Furnace 2- Polymer Curing Tube
Furnace 3- Oxidation Tube
Furnace 4- Polymer Curing Tube

The Noran EDS, which is attached to the Hitachi SEM, performs elemental analysis on a sample.

Cooling
External Water cooler
UV-Module
Wave length: 200nm - 1000nm, 1.8W/cm2
UV-filter: 250nm - 400nm
Configuration: One Lamp, pulsed
Exposure area: 6 inch
Temperature (Max): 200 �C
Pressure (Max): <e; 80
Separation Unit
Semi-automatic separation unit for easy de-molding
De-molding system
Automatic controlled de-molding (each substrate size needs to be specified)

The Labcoter PDS 2010 is a vacuum system used for vapor deposition of Parylene. The deposition happens at room temperature in vacuum. Parylene will stick to any surface at temperatures below 80C and is difficult to remove.

The Plasma Cleaner uses an active ionized gas (plasma) in a low pressure environment to descum and remove residual organics from samples.

A PECVD (Plasma Enhanced Chemical Vapor Depositor) reacts gases in a RF (radio frequency) induced plasma to deposit materials such as silicon dioxide and silicon nitride. This PECVD has two chambers.
-Operates at 13.56 MHz
-Sample size: pieces to 6" wafers
-Typical deposition rates: 100 angstrom/min - 400 angstrom/min
-Typical processes: Silicon Dioxide, Silicon Nitride, Silicon Oxynitride

RIEs (reactive ion etchers) are used to etch various materials, such as silicon dioxide, silicon nitride, various polymers, and various metals from the surface of a substrate using various reactive gases in a RF (radio frequency) induced plasma.

The RF sputterer can be used to deposit many dielectrics. Coatings are performed by accelerating ions or an argon oxygen mixture into the surface of a sputter target, which is made of the material to be applied to the sample.
-Sputter two or more dissimilar materials simultaneously for complete control of film stoichiometry (co-deposition)
-Integrated touch screen control
-Single substrate up to 12" diameter
-Multiple substrate up to 4" diameter
-Substrate fixture rotation up to 20rpm

The Samco model UV-1 is a stripper/cleaner used for cleaning or stripping organic materials such as solvent residues, photoresist, ink, or polyimide from substrate materials. The system accomplishes this with a combination of UV light, ozone, and heat.

The surface charge analyzer is used as a quality monitor for measuring surface charge on films such as silicon dioxide.

The Signatone Four Point Probe measures sheet resistivity on both blank wafers and wafers with a thin layer. The probe measures resistivity less than 1 ohm.

The STS ICP is a CMOS-compatible tool used for integrated MEMS-CMOS processes, and is meant for narrow (<10 micron in width) high aspect-ratio trench etching in Silicon and SOI wafers. At the MiRC, this system is used only for etching high aspect-ratio trenches in Silicon and SOI wafers.

STS' ICP system combines a high conductance high vacuum compatible process chamber with a patented ICP source to produce a very high ion density at low pressures. With this technology, STS ICP Standard Oxide Etcher is suitable for shallow etching (less than 15 micron trenches) of SiO₂ and III-V materials that require higher etch rates, higher aspect ratios, and better selectivity compared to using conventional RIE technology.

The P15 OF is a robust, programmable stylus profiler system that provides 2D and 3D topographic measurements.

The Trion Phantom etcher has an Inductively Coupled Plasma (ICP) source. The ICP allows the user to create high-density plasma. The high-density plasma enables high etch rates and anisotropy. An electrostatic chuck provides increased sample cooling during the etching process.

The Tystar Nitride Furnace 1 is used for N-type doping, Polysilicon doping (N-type)

The Tystar Nitride Furnace 3 is used for Padox, Well, Field (LOCOS) oxide growth.

The Tystar Poly Furnace 1 is used for LTO/implantation anneal.

The Tystar Poly Furnace 3 is used for gate oxide growth.

TYTAN Furnace systems can be used for all conventional atmospheric and low-pressure CVD processes employed in the semiconductor industry. A variety of advanced wafer fabrication processes are also possible, including: Thick Themal Oxides, Silicon-Germanium, etc.
Polysilicon furnace: Deposition
Tube 1- LTO/implantation anneal
Tube 2- Kooi, P-well drive, and dry oxidation
Tube 3- gate oxide growth
Tube 4- polysilicon deposition

A PECVD (Plasma Enhanced Chemical Vapor Depositor) reacts gases in a RF (radio frequency) induced plasma to deposit materials such as silicon dioxide and silicon nitride. This PECVD has one chamber.
-Operates at 13.56 Mhz
-Large deposition electrode: up to 5 -3", 4 - 4" wafers or a single 6" wafer
-Designed to control the stress of deposited films by adjusting the ratio of He:N₂
-Typical deposition rates range from 80 angstroms/minute to 400 angstroms/minute, varying with temperature and power

The Verteq spin rinse dryer is a drying system that uses centrifugal forces to dry the surface of a substrate. The liquid on the substrate surface is spun off and drained from the bowl while liquid droplets on the drying chamber surfaces are evaporated.

The Vision 320 RIE is a manually loaded Reactive Ion Etcher plasma system. It is used to etch a variety of oxides.

The Veeco noncontact profilometer uses the phase change of light reflecting from various heights of similar materials to measure the uniformity of a flat surface or the horizontal distance between two adjacent surfaces.

This tool uses xenon difluoride gas sent through a showerhead to isotropically dry etch silicon, germanium, and molybdenum. It can process pieces up to 4" wafers and generates relatively rough isotropically etched features.