Questions, comments, complaints, bugs about this page? We would like to hear from you.
Nanoimprint Lithography Now Available at Georgia Tech
A NIL system was installed at the MiRC in July which enables a low-cost process of mass replication of nanoscale and microscale structures.
Sep 22, 2005: An Obducat Nanoimprint Lithography (NIL)
system was delivered and installed at the
Georgia Tech Microelectronics Research
Center (MiRC) in July of 2005. The system
enables a low-cost process of mass
replication (batch fabrication) of nanoscale
and microscale structures. This tool, along
with the MiRC’s state-of-the-art electron
beam nanolithography facility allows MiRC
users the rare opportunity to have in one
facility the ability to design and fabricate
sub-20nm stamping templates and use them
for nanoimprinting.
The system features a
6" chamber, UV exposure module, automatic
demolding, and a heated stage. The
maximum temperature and pressure that can
be applied during the imprint process are
300°C and 80 bar, respectively. The imprint
process works by applying a pneumatic force (and temperature when needed) on a template that is positioned
above a substrate (typically Si wafer) with a thermoplastic or UV curable resist. Following the imprint process,
the template is removed from the substrate leaving behind the deformed resist. Subsequent processes, such
as a dry etch, are used to pattern the underlying material. Imprint technology has also been used to fabricate
a wide range of devices such as polymer optical waveguides and fluidic channels. People with potential
applications are invited to discuss them with MiRC staff. For more information, please contact Kevin Martin
by phone at 404-894-4035 and email at kevin.martin@mirc.gatech.edu, or Muhannad Bakir by phone at 404-
385-6276 and email at muhannad.bakir@mirc.gatech.edu.