Microelectronics Research Center

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Process 2% SiH4 Flow (sccm) N2Flow (sccm) N2O Flow (sccm) Pressure (sccm) Power (W) Temp (°C) Rate (Å / min)
High Freq. Nitride 2000 40 900 20 @ 13.56 MHz 300 140
Low Freq. Nitride 2000 10 550 60 @ 380 kHz 300 460
Low Stress Nitride 2000 30 750 20 @ 13.56 MHz / 6 sec
20 @ 380 kHz / 1.5 sec
300 80
High Freq. Oxide 400 1420 800 20 @ 13.56 MHz 300 480
Low Freq. Oxide 400 1420 550 60 @ 380 kHz 300 720